VS-GP400TD60S www.vishay.com vishay semiconductors revision: 20-may-16 1 document number: 95768 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual int-a-pak low profile half bridge (trench pt igbt), 400 a proprietary vishay igb t silicon l series features ? trench pt igbt technology ?low v ce(on) ? square rbsoa ?hexfred ? antiparallel diode wi th ultrasoft reverse recovery characteristics ? industry standard package ?al 2 o 3 dbc ? ul approved file e78996 ? designed for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? increased operating efficiency ? performance optimized as output inverter stage for tig welding machines ? direct mounting on heatsink ? very low junction to case thermal resistance note (1) maximum continuous co llector current must be limited to 500 a to do not exceed the ma ximum temperatur e of terminals product summary v ces 600 v i c dc at t c = 103 c 400 a v ce(on) (typical) at 400 a, 25 c 1.30 v speed dc to 1 khz package diap low profile circuit half bridge dual int-a-pak low pro?le absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c (1) t c = 25 c 758 a t c = 80 c 525 pulsed collector current i cm n/a clamped inductive load current i lm n/a diode continuous forward current i f t c = 25 c 219 t c = 80 c 145 gate to emi tter voltage v ge 20 v maximum power dissipation (igbt) p d t c = 25 c 1563 w t c = 80 c 875 rms isolation voltage v isol any terminal to case (v rms t = 1 s, t j = 25 c) 3500 v operating junction and storage temperature range t j , t stg -40 to +150 c
VS-GP400TD60S www.vishay.com vishay semiconductors revision: 20-may-16 2 document number: 95768 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 500 a 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 200 a - 1.13 1.24 v ge = 15 v, i c = 400 a - 1.30 1.52 v ge = 15 v, i c = 200 a, t j = 125 c - 1.03 - v ge = 15 v, i c = 400 a, t j = 125 c - 1.26 - gate threshold voltage v ge(th) v ce = v ge , i c = 9.6 ma 4.9 5.9 8.8 v ce = v ge , i c = 9.6 ma, t j = 125 c - 3.2 - temperature coefficient of threshold voltage ? v ge(th) / ? tv ce = v ge , i c = 9.6 ma, (25 c to 125 c) - -27 - mv/c forward transconductance g fe v ce = 20 v, i c = 50 a - 74 - s transfer characteristics v ge v ce = 20 v, i c = 400 a - 10.7 - v collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 5 200 a v ge = 0 v, v ce = 600 v, t j = 125 c - 1.5 - ma diode forward voltage drop v fm i fm = 200 a - 1.42 1.55 v i fm = 400 a - 1.76 1.98 i fm = 200 a, t j = 125 c - 1.43 - i fm = 400 a, t j = 125 c - 1.88 - gate to emitter leakage current i ges v ge = 20 v - - 750 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units turn-on switching energy e on i c = 400 a, v cc = 300 v, v ge = 15 v, ? r g = 1.5 ? , l = 500 h, t j = 25 c -6.3- mj turn-off switching energy e off -45- total switching energy e tot - 51.3 - turn-on delay time t d(on) - 633 - ns rise time t r - 254 - turn-off delay time t d(off) - 715 - fall time t f - 490 - turn-on switching loss e on i c = 400 a, v cc = 300 v, v ge = 15 v, ? r g = 1.5 ? , l = 500 h, t j = 125 c -7.2- mj turn-off switching loss e off -74- total switching loss e tot - 81.2 - turn-on delay time t d(on) - 595 - ns rise time t r - 250 - turn-off delay time t d(off) - 950 - fall time t f - 865 - reverse bias safe operating area rbsoa t j = 150 c, i c = n/a, v cc = 300 v ? v p = 600 v, r g = 1.5 ??? v ge = 15 v to 0 v, l = 500 h fullsquare diode reverse recovery time t rr i f = 400 a, r g = 1.5 ???? v cc = 300 v, t j = 25 c - 123 - ns diode peak reverse current i rr - 107 - a diode recovery charge q rr -8.1-c diode reverse recovery time t rr i f = 400 a, r g = 1.5 ???? v cc = 300 v, t j = 125 c - 167 - ns diode peak reverse current i rr - 140 - a diode recovery charge q rr - 14.7 - c
VS-GP400TD60S www.vishay.com vishay semiconductors revision: 20-may-16 3 document number: 95768 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum igbt conti nuous collector current vs. case temperature fig. 2 - typical igbt output characteristics, v ge = 15 v fig. 3 - typical igbt output characteristics, t j = 125 c fig. 4 - collector to emitter vo ltage vs. junction temperature thermal and mechanical specifications parameter symbol min. typ. max. units operating junction and storage temperature range t j , t stg -40 - 150 c junction to case per leg igbt r thjc - - 0.08 c/w diode - - 0.4 case to sink per module r thcs -0.05- mounting torque case to heatsink: m6 screw 4 - 6 nm case to terminal 1, 2, 3: m5 screw 2 - 4 weight - 270 - g 0 20 40 60 80 100 120 140 160 0 200 400 600 800 allowable case temperature ( c) i c - continuous collector current (a) dc 0 100 200 300 400 500 600 700 800 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i c (a) v ce (v) t j = 125 c t j = 25 c t j = 150 c 0 100 200 300 400 500 600 700 800 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c (a) v ce (v) v g e = 12 v v g e = 15 v v g e = 18 v v g e = 9 v 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 20 40 60 80 100 120 140 160 v ce (v) t j ( c) 600 a 300 a 400 a 100 a
VS-GP400TD60S www.vishay.com vishay semiconductors revision: 20-may-16 4 document number: 95768 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical igbt transfer characteristics fig. 6 - typical igbt gate threshold voltage fig. 7 - typical igbt zero gate voltage collector current fig. 8 - typical diode forward characteristics fig. 9 - maximum diode cont inuous forward current vs. case temperature fig. 10 - typical igbt energy loss vs. i c t j = 125 c, v cc = 300 v, r g = 1.5 ? , v ge = 15 v, l = 500 h 0 100 200 300 400 500 600 700 800 4 5 6 7 8 9 10 11 12 13 i c (a) v g e (v) t j = 25 c t j = 125 c v g e = 20 v 0 1 2 3 4 5 6 7 8 0246810 v g eth (v) i c (ma) t j = 25 c t j = 125 c 0.0001 0.001 0.01 0.1 1 10 100200300400500600 i ce s (ma) v ce s (v) t j = 25 c t j = 125 c t j = 150 c 0 100 200 300 400 500 600 700 800 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 i f (a) v f (v) t j = 125 c t j = 25 c t j = 150 c 0 20 40 60 80 100 120 140 160 0 30 60 90 120 150 180 210 240 allowable case temperature ( c) i f - continuous forwar d current (a) dc 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 ener g y (mj) i c (a) e off e on
VS-GP400TD60S www.vishay.com vishay semiconductors revision: 20-may-16 5 document number: 95768 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - typical igbt switching time vs. i c t j = 125 c, v cc = 300 v, r g = 1.5 ? , v ge = 15 v, l = 500 h fig. 12 - typical igbt energy loss vs. r g t j = 125 c, v cc = 300 v, i c = 400 a, v ge = 15 v, l = 500 h fig. 13 - typical igbt switching time vs. r g t j = 125 c, v cc = 300 v, i c = 400 a, v ge = 15 v, l = 500 h fig. 14 - typical diode reverse recovery time vs. di f /dt v cc = 300 v, i f = 400 a fig. 15 - typical diode reverse recovery current vs. di f /dt v cc = 300 v, i f = 400 a fig. 16 - typical diode reverse recovery charge vs. di f /dt v cc = 300 v, i f = 400 a 10 100 1000 10000 0 100 200 300 400 500 s witchin g time (ns) i c (a) t r t d(off) t d(on) t f 0 20 40 60 80 100 0 5 10 15 20 25 30 ener g y (mj) r g ( e off e on 100 1000 10000 0 5 10 15 20 25 30 s witchin g time (ns) r g () t d(off) t f t d(on) t r 100 120 140 160 180 200 220 240 260 200 400 600 800 1000 1200 1400 1600 1800 t rr (ns) d i f / d t (a/s) t j = 25 c t j = 125 c 10 30 50 70 90 110 130 150 170 200 400 600 800 1000 1200 1400 1600 1800 i rr (a) d i f / d t (a/s) t j = 25 c t j = 125 c 0 2 4 6 8 10 12 14 16 18 200 400 600 800 1000 1200 1400 1600 1800 q rr (c) d i f / d t (a/s) t j = 25 c t j = 125 c
VS-GP400TD60S www.vishay.com vishay semiconductors revision: 20-may-16 6 document number: 95768 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 17 - maximum th ermal impe dance z thjc characteristics - (igbt) fig. 18 - maximum thermal impedance z thjc characteristics - (diode) 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 z thjc - thermal impe d ance junction to case ( c/w) t 1 - rectan g ular pulse duration (s) 0.50 0.20 0.10 0.05 0.02 0.01 dc 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 z thjc - thermal impe d ance junction to case ( c/w) t 1 - rectan g ular pulse duration (s) 0.50 0.20 0.10 0.05 0.02 0.01 dc
VS-GP400TD60S www.vishay.com vishay semiconductors revision: 20-may-16 7 document number: 95768 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95435 device code g vs- p 400 t d 1 5 3 2 6 - insulated gate bipolar transistor (igbt) 2 - p = trench pt igbt technology 3 - current rating (400 = 400 a) 4 - vishay semiconductors product 1 60 s 7 8 4 - package indicator (d = dual int-a-pak low profile) 6 - voltage rating (60 = 600 v) 7 - speed / type (s = standard speed igbt) 8 - circuit configuration (t = half bridge) 5 4 5 1 6 7 3 2
outline dimensions www.vishay.com vishay semiconductors revision: 11-nov-14 1 document number: 95435 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual int-a-pak low profile dimensions in millimeters 28 0.5 48 0.5 ? 6.4 21.9 0.5 15 0.5 7.5 7.2 16 0.5 2.8 x 0.5 13.5 108 1 93 0.3 62 1 27 0.4 12 15 0.4 48 0.3 28 0.5 m5 s crewing depth max. 8
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